CSD19538Q3A Texas Instruments
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.39 EUR |
| 5000+ | 0.33 EUR |
| 10000+ | 0.28 EUR |
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Technische Details CSD19538Q3A Texas Instruments
Description: MOSFET N-CH 100V 15A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.8W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.
Weitere Produktangebote CSD19538Q3A nach Preis ab 0.34 EUR bis 1.78 EUR
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CSD19538Q3A | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 100V 15A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q3A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 15A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 11830 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q3A | Hersteller : Texas Instruments |
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19538Q3AT |
auf Bestellung 10329 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD19538Q3A | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 100V; 20V; 72mOhm; 15A; 23W; -55°C ~ 150°C; CSD19538Q3AT CSD19538Q3A TCSD19538q3a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19538Q3A Produktcode: 165390
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CSD19538Q3A | Hersteller : Texas Instruments |
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CSD19538Q3A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R |
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