CSD19538Q3AT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 15A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19538Q3AT Texas Instruments
Description: MOSFET N-CH 100V 15A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.8W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.
Weitere Produktangebote CSD19538Q3AT nach Preis ab 3.76 EUR bis 3.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
|
CSD19538Q3AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 23W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.3nC Dimensions: 3.3x3.3mm |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
|
||
|
CSD19538Q3AT | Texas Instruments |
Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD19538Q3AT |
![]() |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 23W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Dimensions: 3.3x3.3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 23W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Dimensions: 3.3x3.3mm
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| CSD19538Q3AT |
![]() |
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R
Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)



