
CSD19538Q3AT TEXAS INSTRUMENTS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 23W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 3.3x3.3mm
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
85+ | 0.85 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
105+ | 0.69 EUR |
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Technische Details CSD19538Q3AT TEXAS INSTRUMENTS
Description: MOSFET N-CH 100V 15A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.8W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.
Weitere Produktangebote CSD19538Q3AT nach Preis ab 0.69 EUR bis 3.04 EUR
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CSD19538Q3AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 23W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 3.3x3.3mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 436 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19538Q3AT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q3AT | Hersteller : Texas Instruments |
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auf Bestellung 1112 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q3AT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 4247 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q3AT | Hersteller : Texas Instruments |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19538Q3AT | Hersteller : Texas Instruments |
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CSD19538Q3AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD19538Q3AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |