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CSD23280F3

CSD23280F3 Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23280f3 Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 1.8A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.09 EUR
9000+0.09 EUR
15000+0.09 EUR
21000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD23280F3 Texas Instruments

Description: MOSFET P-CH 12V 1.8A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 3-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V.

Weitere Produktangebote CSD23280F3 nach Preis ab 0.09 EUR bis 0.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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CSD23280F3 CSD23280F3 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23280f3 Description: MOSFET P-CH 12V 1.8A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V
auf Bestellung 40864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
46+0.38 EUR
100+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CSD23280F3 CSD23280F3 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23280f3 MOSFET -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
auf Bestellung 15943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.43 EUR
100+0.17 EUR
1000+0.13 EUR
3000+0.11 EUR
9000+0.10 EUR
24000+0.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CSD23280F3 CSD23280F3 Hersteller : Texas Instruments slps601.pdf Trans MOSFET P-CH 12V 1.8A 3-Pin PicoStar T/R
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