CSD25202W15T Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Bulk
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
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Technische Details CSD25202W15T Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA, Supplier Device Package: 9-DSBGA, Vgs(th) (Max) @ Id: 1.05V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-UFBGA, DSBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -6V.
Weitere Produktangebote CSD25202W15T nach Preis ab 0.92 EUR bis 3.06 EUR
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CSD25202W15T | Texas Instruments |
Description: MOSFET P-CH 20V 4A 9DSBGA Supplier Device Package: 9-DSBGA Vgs(th) (Max) @ Id: 1.05V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25202W15T | Texas Instruments |
Description: MOSFET P-CH 20V 4A 9DSBGA Part Status: Active Supplier Device Package: 9-DSBGA Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Power Dissipation (Max): 500mW (Ta) Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25202W15T |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA
Supplier Device Package: 9-DSBGA
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, DSBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Description: MOSFET P-CH 20V 4A 9DSBGA
Supplier Device Package: 9-DSBGA
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, DSBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.13 EUR |
| 500+ | 1.03 EUR |
| 750+ | 0.98 EUR |
| 1250+ | 0.92 EUR |
| CSD25202W15T |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA
Part Status: Active
Supplier Device Package: 9-DSBGA
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, DSBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Description: MOSFET P-CH 20V 4A 9DSBGA
Part Status: Active
Supplier Device Package: 9-DSBGA
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, DSBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.3 EUR |