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CSD25211W1015

CSD25211W1015 Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25211w1015 Hersteller: Texas Instruments
MOSFETs PCh NexFET Power MOSFET
auf Bestellung 3683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.11 EUR
10+0.77 EUR
100+0.53 EUR
500+0.49 EUR
1000+0.43 EUR
3000+0.29 EUR
9000+0.25 EUR
Mindestbestellmenge: 3
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Technische Details CSD25211W1015 Texas Instruments

Description: MOSFET P-CH 20V 3.2A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V.

Weitere Produktangebote CSD25211W1015 nach Preis ab 0.51 EUR bis 1.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD25211W1015 CSD25211W1015 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25211w1015 Description: MOSFET P-CH 20V 3.2A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
24+0.74 EUR
100+0.51 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
CSD25211W1015 CSD25211W1015 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25211w1015 Description: MOSFET P-CH 20V 3.2A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH