Technische Details CSD25310Q2 Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.9W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V.
Weitere Produktangebote CSD25310Q2 nach Preis ab 0.23 EUR bis 1.24 EUR
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CSD25310Q2 | Texas Instruments |
 Description: MOSFET P-CH 20V 20A 6WSONPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25310Q2 | Texas Instruments |
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R |
auf Bestellung 2198 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25310Q2 | Texas Instruments |
MOSFETs 20-V P-CH NexFET Pwr MOSFET |
auf Bestellung 5205 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25310Q2 | Texas Instruments |
Description: MOSFET P-CH 20V 20A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V |
auf Bestellung 12683 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25310Q2 | Texas Instruments |
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSD25310Q2 | Texas Instruments |
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 48 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD25310Q2 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
Description: MOSFET P-CH 20V 20A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| CSD25310Q2 |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 292+ | 0.6 EUR |
| 412+ | 0.42 EUR |
| 519+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| CSD25310Q2 |
|
Hersteller: Texas Instruments
MOSFETs 20-V P-CH NexFET Pwr MOSFET
MOSFETs 20-V P-CH NexFET Pwr MOSFET
auf Bestellung 5205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| CSD25310Q2 |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
Description: MOSFET P-CH 20V 20A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
auf Bestellung 12683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| CSD25310Q2 |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD25310Q2 |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)