CSD25310Q2 Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
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Technische Details CSD25310Q2 Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.9W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V.
Weitere Produktangebote CSD25310Q2 nach Preis ab 0.2 EUR bis 1.04 EUR
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CSD25310Q2 | Hersteller : Texas Instruments |
MOSFETs 20-V P-CH NexFET Pwr MOSFET |
auf Bestellung 8044 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25310Q2 | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 20A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V |
auf Bestellung 11036 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2 | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -20A; Idm: 48A; 2.9W; WSON6 Technology: NexFET™ Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Case: WSON6 Drain current: -20A Drain-source voltage: -20V Gate charge: 3.6nC On-state resistance: 89mΩ Power dissipation: 2.9W Gate-source voltage: ±8V Pulsed drain current: 48A Kind of channel: enhancement |
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