CSD25310Q2T Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-WSON (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 250+ | 0.96 EUR |
| 500+ | 0.87 EUR |
| 750+ | 0.82 EUR |
| 1250+ | 0.77 EUR |
| 1750+ | 0.74 EUR |
| 2500+ | 0.71 EUR |
| 6250+ | 0.65 EUR |
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Technische Details CSD25310Q2T Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 6-WSON (2x2), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 2.9W (Ta), Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD25310Q2T nach Preis ab 0.73 EUR bis 2.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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CSD25310Q2T | Texas Instruments |
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25310Q2T | Texas Instruments |
MOSFETs -20-V P channel Nex FET power MOSFET si A 595-CSD25310Q2 |
auf Bestellung 16705 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25310Q2T | Texas Instruments |
Description: MOSFET P-CH 20V 20A 6WSON Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-WSON (2x2) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 2.9W (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 11965 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25310Q2T | Texas Instruments |
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD25310Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 71+ | 2.1 EUR |
| 102+ | 1.43 EUR |
| 164+ | 0.87 EUR |
| 250+ | 0.83 EUR |
| CSD25310Q2T |
|
Hersteller: Texas Instruments
MOSFETs -20-V P channel Nex FET power MOSFET si A 595-CSD25310Q2
MOSFETs -20-V P channel Nex FET power MOSFET si A 595-CSD25310Q2
auf Bestellung 16705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 1.64 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.74 EUR |
| 2500+ | 0.73 EUR |
| CSD25310Q2T |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 20A 6WSON
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-WSON (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 20A 6WSON
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-WSON (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 11965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 11+ | 1.64 EUR |
| 100+ | 1.1 EUR |
| CSD25310Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)