CSD25404Q3 Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD25404Q3 Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V.
Weitere Produktangebote CSD25404Q3 nach Preis ab 0.65 EUR bis 2.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD25404Q3 | Texas Instruments |
MOSFETs 20V Pch MOSFET |
auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
CSD25404Q3 | Texas Instruments |
Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 104A; 96W; -55°C ~ 150°C; CSD25404Q3T CSD25404Q3 TCSD25404q3 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
CSD25404Q3 | Texas Instruments |
Description: MOSFET P-CH 20V 104A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V |
auf Bestellung 7380 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| CSD25404Q3 | TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 20V; 60A; 96W Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain current: 60A Drain-source voltage: 20V Gate-source voltage: 12V Power dissipation: 96W |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| CSD25404Q3 |
|
Hersteller: Texas Instruments
MOSFETs 20V Pch MOSFET
MOSFETs 20V Pch MOSFET
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.75 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.66 EUR |
| 5000+ | 0.65 EUR |
| CSD25404Q3 |
|
Hersteller: Texas Instruments
Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 104A; 96W; -55°C ~ 150°C; CSD25404Q3T CSD25404Q3 TCSD25404q3
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 104A; 96W; -55°C ~ 150°C; CSD25404Q3T CSD25404Q3 TCSD25404q3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 1.9 EUR |
| CSD25404Q3 |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
auf Bestellung 7380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 12+ | 1.51 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
| CSD25404Q3 |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 60A; 96W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: 60A
Drain-source voltage: 20V
Gate-source voltage: 12V
Power dissipation: 96W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 60A; 96W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: 60A
Drain-source voltage: 20V
Gate-source voltage: 12V
Power dissipation: 96W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.7 EUR |