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CSD25404Q3T

CSD25404Q3T Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
auf Bestellung 6250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.22 EUR
500+1.11 EUR
750+1.05 EUR
1250+0.99 EUR
1750+0.96 EUR
2500+0.92 EUR
6250+0.86 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD25404Q3T Texas Instruments

Description: MOSFET P-CH 20V 104A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V.

Weitere Produktangebote CSD25404Q3T nach Preis ab 0.85 EUR bis 3.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD25404Q3T CSD25404Q3T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NexFET™
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: VSON-CLIP8
Drain current: -60A
Drain-source voltage: -20V
Gate charge: 10.9nC
Dimensions: 3.3x3.3mm
On-state resistance: 5.5mΩ
Gate-source voltage: ±12V
Power dissipation: 96W
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
50+1.46 EUR
55+1.32 EUR
73+0.99 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T CSD25404Q3T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3 MOSFETs -20V, P-channel NexFET Pwr MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.16 EUR
10+1.72 EUR
100+0.85 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T CSD25404Q3T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3 Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
auf Bestellung 6402 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
10+2.06 EUR
100+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T Texas Instruments csd25404q3.pdf P-канальний ПТ, Udss, В = 20, Id = 104 А, Ciss, пФ @ Uds, В = 2120 @ 10, Qg, нКл = 14,1 @ 4,5 В, Rds = 6,5 мОм @ 10 A, 4,5 В, Ugs(th) = 1,15 В @ 250 мкА, Р, Вт = 2,8, 96, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: PowerVDFN-8 Од. вим:
Anzahl je Verpackung: 250 Stücke
verfügbar 50 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3
CSD25404Q3T
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NexFET™
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: VSON-CLIP8
Drain current: -60A
Drain-source voltage: -20V
Gate charge: 10.9nC
Dimensions: 3.3x3.3mm
On-state resistance: 5.5mΩ
Gate-source voltage: ±12V
Power dissipation: 96W
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
37+1.94 EUR
50+1.46 EUR
55+1.32 EUR
73+0.99 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3
CSD25404Q3T
Hersteller: Texas Instruments
MOSFETs -20V, P-channel NexFET Pwr MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.16 EUR
10+1.72 EUR
100+0.85 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25404q3
CSD25404Q3T
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
auf Bestellung 6402 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.22 EUR
10+2.06 EUR
100+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25404Q3T csd25404q3.pdf
Hersteller: Texas Instruments
P-канальний ПТ, Udss, В = 20, Id = 104 А, Ciss, пФ @ Uds, В = 2120 @ 10, Qg, нКл = 14,1 @ 4,5 В, Rds = 6,5 мОм @ 10 A, 4,5 В, Ugs(th) = 1,15 В @ 250 мкА, Р, Вт = 2,8, 96, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: PowerVDFN-8 Од. вим:
Anzahl je Verpackung: 250 Stücke
verfügbar 50 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH