CSD25404Q3T TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8
Case: VSON-CLIP8
Mounting: SMD
On-state resistance: 5.5mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: -20V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Dimensions: 3.3x3.3mm
Gate charge: 10.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 426 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.5 EUR |
| 53+ | 1.37 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
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Technische Details CSD25404Q3T TEXAS INSTRUMENTS
Description: MOSFET P-CH 20V 104A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V.
Weitere Produktangebote CSD25404Q3T nach Preis ab 0.99 EUR bis 3.64 EUR
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CSD25404Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8 Case: VSON-CLIP8 Mounting: SMD On-state resistance: 5.5mΩ Kind of package: reel; tape Technology: NexFET™ Drain-source voltage: -20V Drain current: -60A Type of transistor: P-MOSFET Power dissipation: 96W Polarisation: unipolar Dimensions: 3.3x3.3mm Gate charge: 10.9nC Kind of channel: enhanced Gate-source voltage: ±12V |
auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25404Q3T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 104A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V |
auf Bestellung 8250 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD25404Q3T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 104A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V |
auf Bestellung 8714 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD25404Q3T | Hersteller : Texas Instruments |
MOSFET -20V, P-channel NexFET Pwr MOSFET |
auf Bestellung 4327 Stücke: Lieferzeit 14-28 Tag (e) |
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| CSD25404Q3T | Hersteller : Texas Instruments |
P-канальний ПТ; Udss, В = 20; Id = 104 А; Ciss, пФ @ Uds, В = 2120 @ 10; Qg, нКл = 14,1 @ 4,5 В; Rds = 6,5 мОм @ 10 A, 4,5 В; Ugs(th) = 1,15 В @ 250 мкА; Р, Вт = 2,8; 96; Тексп, °C = -55...+150; Тип монт. = smd; PowerVDFN-8 |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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