CSD25404Q3T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 104A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
auf Bestellung 8250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.97 EUR |
| 500+ | 0.83 EUR |
| 1250+ | 0.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD25404Q3T Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V.
Weitere Produktangebote CSD25404Q3T nach Preis ab 0.85 EUR bis 3.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD25404Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8 Technology: NexFET™ Drain-source voltage: -20V Drain current: -60A On-state resistance: 5.5mΩ Type of transistor: P-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 10.9nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: VSON-CLIP8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 408 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
CSD25404Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8 Technology: NexFET™ Drain-source voltage: -20V Drain current: -60A On-state resistance: 5.5mΩ Type of transistor: P-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 10.9nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: VSON-CLIP8 |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
CSD25404Q3T | Hersteller : Texas Instruments |
MOSFETs -20V, P-channel NexFET Pwr MOSFET |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD25404Q3T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 104A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V |
auf Bestellung 8714 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| CSD25404Q3T | Hersteller : Texas Instruments |
P-канальний ПТ; Udss, В = 20; Id = 104 А; Ciss, пФ @ Uds, В = 2120 @ 10; Qg, нКл = 14,1 @ 4,5 В; Rds = 6,5 мОм @ 10 A, 4,5 В; Ugs(th) = 1,15 В @ 250 мкА; Р, Вт = 2,8; 96; Тексп, °C = -55...+150; Тип монт. = smd; PowerVDFN-8 |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|