CSD25404Q3T Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 250+ | 1.22 EUR |
| 500+ | 1.11 EUR |
| 750+ | 1.05 EUR |
| 1250+ | 0.99 EUR |
| 1750+ | 0.96 EUR |
| 2500+ | 0.92 EUR |
| 6250+ | 0.86 EUR |
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Technische Details CSD25404Q3T Texas Instruments
Description: MOSFET P-CH 20V 104A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V.
Weitere Produktangebote CSD25404Q3T nach Preis ab 0.85 EUR bis 3.22 EUR
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CSD25404Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8 Kind of package: reel; tape Kind of channel: enhancement Technology: NexFET™ Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Case: VSON-CLIP8 Drain current: -60A Drain-source voltage: -20V Gate charge: 10.9nC Dimensions: 3.3x3.3mm On-state resistance: 5.5mΩ Gate-source voltage: ±12V Power dissipation: 96W |
auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25404Q3T | Hersteller : Texas Instruments |
MOSFETs -20V, P-channel NexFET Pwr MOSFET |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25404Q3T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 104A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V |
auf Bestellung 6402 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25404Q3T | Hersteller : Texas Instruments |
P-канальний ПТ, Udss, В = 20, Id = 104 А, Ciss, пФ @ Uds, В = 2120 @ 10, Qg, нКл = 14,1 @ 4,5 В, Rds = 6,5 мОм @ 10 A, 4,5 В, Ugs(th) = 1,15 В @ 250 мкА, Р, Вт = 2,8, 96, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: PowerV Anzahl je Verpackung: 250 Stücke |
verfügbar 50 Stücke: |