CSD75204W15 Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2P-CH 3A 9DSBGA
Packaging: Bulk
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 9-DSBGA
auf Bestellung 5135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 833+ | 0.61 EUR |
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Technische Details CSD75204W15 Texas Instruments
Description: MOSFET 2P-CH 3A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 9-DSBGA.
Weitere Produktangebote CSD75204W15
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CSD75204W15 | Hersteller : TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD75204W15 - Dual-MOSFET, p-Kanal, 20 V, 3 A tariffCode: 85412900 productTraceability: No rohsCompliant: YES Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm Dauer-Drainstrom Id, p-Kanal: 3A Anzahl der Pins: 9Pin(s) euEccn: NLR Verlustleistung, p-Kanal: 700mW Drain-Source-Spannung Vds, p-Kanal: 20V Drain-Source-Durchgangswiderstand, n-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, max.: 150°C usEccn: EAR99 |
auf Bestellung 510 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD75204W15 | Hersteller : Texas Instruments |
Description: MOSFET 2P-CH 3A 9DSBGA Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 9-DSBGA |
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