auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 347+ | 0.46 EUR |
| 383+ | 0.4 EUR |
| 387+ | 0.38 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD85301Q2 Texas Instruments
Description: MOSFET 2N-CH 20V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active.
Weitere Produktangebote CSD85301Q2 nach Preis ab 0.25 EUR bis 1.56 EUR
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CSD85301Q2 | Hersteller : Texas Instruments |
 Power MOSFET 6-Pin WSON EP T/R |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD85301Q2 | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 20V 5A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD85301Q2 | Hersteller : Texas Instruments |
MOSFET CSD85301Q2 Dual N- Channel Power MOSFET |
auf Bestellung 9339 Stücke: Lieferzeit 14-28 Tag (e) |
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CSD85301Q2 | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 20V 5A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
auf Bestellung 17120 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD85301Q2 | Hersteller : Texas Instruments |
Power MOSFET 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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CSD85301Q2 | Hersteller : Texas Instruments |
Power MOSFET 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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CSD85301Q2 | Hersteller : Texas Instruments |
Power MOSFET 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |