CSD85301Q2T Texas Instruments

Description: MOSFET 2N-CH 20V 5A 6WSON, Part Status: Active, Supplier Device Package: 6-WSON (2x2), Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, 5V Drive, Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 20V, Power - Max: 2.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).