CSD85302LT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 250+ | 0.94 EUR |
| 500+ | 0.86 EUR |
| 750+ | 0.81 EUR |
| 1250+ | 0.78 EUR |
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Technische Details CSD85302LT Texas Instruments
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4; ESD, Mounting: SMD, Semiconductor structure: common drain, Case: PICOSTAR4, Kind of package: reel; tape, Polarisation: unipolar, On-state resistance: 36mΩ, Power dissipation: 1.7W, Gate-source voltage: ±10V, Drain-source voltage: 20V, Kind of channel: enhancement, Version: ESD, Technology: NexFET™, Type of transistor: N-MOSFET x2.
Weitere Produktangebote CSD85302LT nach Preis ab 1.16 EUR bis 2.75 EUR
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CSD85302LT | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Supplier Device Package: 4-Picostar (1.31x1.31) Part Status: Active |
auf Bestellung 3735 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD85302LT | Hersteller : Texas Instruments |
MOSFETs 20V Dual N ch MOSFET A 595-CSD85302L A 5 A 595-CSD85302L |
Produkt ist nicht verfügbar |
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| CSD85302LT | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4; ESD Mounting: SMD Semiconductor structure: common drain Case: PICOSTAR4 Kind of package: reel; tape Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 1.7W Gate-source voltage: ±10V Drain-source voltage: 20V Kind of channel: enhancement Version: ESD Technology: NexFET™ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |