CSD85302LT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.85 EUR |
| 500+ | 0.77 EUR |
| 750+ | 0.73 EUR |
| 1250+ | 0.71 EUR |
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Technische Details CSD85302LT Texas Instruments
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4; ESD, Semiconductor structure: common drain, Case: PICOSTAR4, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 20V, On-state resistance: 36mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 1.7W, Polarisation: unipolar, Version: ESD, Technology: NexFET™, Kind of channel: enhancement, Gate-source voltage: ±10V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote CSD85302LT nach Preis ab 1.22 EUR bis 2.87 EUR
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CSD85302LT | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Supplier Device Package: 4-Picostar (1.31x1.31) Part Status: Active |
auf Bestellung 3993 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD85302LT | Hersteller : Texas Instruments |
20V, N ch NexFET MOSFET dual common source SON3x3, 14mOhm |
Produkt ist nicht verfügbar |
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| CSD85302LT | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4; ESD Semiconductor structure: common drain Case: PICOSTAR4 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V On-state resistance: 36mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Version: ESD Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD85302LT | Hersteller : Texas Instruments |
MOSFETs 20V Dual N ch MOSFET |
Produkt ist nicht verfügbar |
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| CSD85302LT | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4; ESD Semiconductor structure: common drain Case: PICOSTAR4 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V On-state resistance: 36mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Version: ESD Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |