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CSD85302LT Texas Instruments
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Description: MOSFET 2N-CH 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 1.15 EUR |
500+ | 0.99 EUR |
1250+ | 0.8 EUR |
2500+ | 0.76 EUR |
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Technische Details CSD85302LT Texas Instruments
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4, Type of transistor: N-MOSFET x2, Technology: NexFET™, Polarisation: unipolar, Drain-source voltage: 20V, Power dissipation: 1.7W, Case: PICOSTAR4, Gate-source voltage: ±10V, On-state resistance: 36mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote CSD85302LT nach Preis ab 1.16 EUR bis 1.83 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD85302LT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Supplier Device Package: 4-Picostar (1.31x1.31) Part Status: Active |
auf Bestellung 3995 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD85302LT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD85302LT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4 Type of transistor: N-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.7W Case: PICOSTAR4 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
CSD85302LT | Hersteller : Texas Instruments |
![]() |
Produkt ist nicht verfügbar |
|||||||||
CSD85302LT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4 Type of transistor: N-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.7W Case: PICOSTAR4 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |