CSD85302LT

CSD85302LT Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85302l Hersteller: Texas Instruments
Description: MOSFET 2N-CH 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
auf Bestellung 3950 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
250+1.15 EUR
500+ 0.99 EUR
1250+ 0.8 EUR
2500+ 0.76 EUR
Mindestbestellmenge: 250
Produktrezensionen
Produktbewertung abgeben

Technische Details CSD85302LT Texas Instruments

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4, Type of transistor: N-MOSFET x2, Technology: NexFET™, Polarisation: unipolar, Drain-source voltage: 20V, Power dissipation: 1.7W, Case: PICOSTAR4, Gate-source voltage: ±10V, On-state resistance: 36mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote CSD85302LT nach Preis ab 1.16 EUR bis 1.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD85302LT CSD85302LT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85302l Description: MOSFET 2N-CH 4PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.5 EUR
100+ 1.16 EUR
Mindestbestellmenge: 10
CSD85302LT Hersteller : Texas Instruments getliterature.pdf 20V, N ch NexFET MOSFET dual common source SON3x3, 14mOhm
Produkt ist nicht verfügbar
CSD85302LT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85302l Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4
Type of transistor: N-MOSFET x2
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.7W
Case: PICOSTAR4
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD85302LT CSD85302LT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85302l MOSFET 20V Dual N ch MOSFET
Produkt ist nicht verfügbar
CSD85302LT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85302l Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4
Type of transistor: N-MOSFET x2
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.7W
Case: PICOSTAR4
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar