CSD85312Q3E Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 20V 39A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 8V
Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
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Technische Details CSD85312Q3E Texas Instruments
Description: MOSFET 2N-CH 20V 39A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 39A, Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V, Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 8V, Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD85312Q3E nach Preis ab 0.74 EUR bis 2.20 EUR
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CSD85312Q3E | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 20V 39A 8VSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 8V Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 6458 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD85312Q3E | Hersteller : Texas Instruments |
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CSD85312Q3E | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 20V 39A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 8V Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 6648 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD85312Q3E | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |