auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 180+ | 0.84 EUR |
| 182+ | 0.80 EUR |
| 207+ | 0.68 EUR |
| 250+ | 0.65 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.50 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD86311W1723 Texas Instruments
Description: MOSFET 2N-CH 25V 4.5A 12DSBGA, Packaging: Tape & Reel (TR), Package / Case: 12-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V, Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 12-DSBGA.
Weitere Produktangebote CSD86311W1723 nach Preis ab 0.48 EUR bis 1.90 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD86311W1723 | Hersteller : Texas Instruments |
 Power Block 12-Pin Wafer T/R |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
CSD86311W1723 | Hersteller : Texas Instruments |
MOSFET Dual N-Channel Nex FET Pwr MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD86311W1723 | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 4.5A 12DSBGA Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 12-DSBGA |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| CSD86311W1723 |
TI BGA 1127+ |
auf Bestellung 1639 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
 |
CSD86311W1723 | Hersteller : Texas Instruments |
High Frequency Synchronous Power Module |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD86311W1723 | Hersteller : Texas Instruments |
Power Block 12-Pin Wafer T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD86311W1723 | Hersteller : Texas Instruments |
Power Block 12-Pin Wafer T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD86311W1723 | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 4.5A 12DSBGA Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 12-DSBGA |
Produkt ist nicht verfügbar |