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CSD86336Q3D

CSD86336Q3D Texas Instruments

csd86336q3d.pdf suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d
Hersteller: Texas Instruments
MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3DT
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+2.02 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.08 EUR
2500+0.96 EUR
5000+0.94 EUR
Mindestbestellmenge: 2
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Technische Details CSD86336Q3D Texas Instruments

Description: MOSFET 2N-CH 25V 20A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 125°C, Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V, Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3).

Weitere Produktangebote CSD86336Q3D nach Preis ab 1.03 EUR bis 3.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD86336Q3D CSD86336Q3D Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d Description: MOSFET 2N-CH 25V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
10+2.09 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.03 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CSD86336Q3D Hersteller : Texas Instruments csd86336q3d.pdf Description: MOSFET 2N-CH 25V 20A 8VSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
auf Bestellung 4670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
327+1.38 EUR
Mindestbestellmenge: 327
Im Einkaufswagen  Stück im Wert von  UAH
CSD86336Q3D CSD86336Q3D Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d Description: MOSFET 2N-CH 25V 20A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
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Im Einkaufswagen  Stück im Wert von  UAH