Weitere Produktangebote CSD87312Q3E nach Preis ab 0.98 EUR bis 3.08 EUR
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CSD87312Q3E | Texas Instruments |
 Description: MOSFET 2N-CH 30V 27A 8VSONPart Status: Active Supplier Device Package: 8-VSON (3.3x3.3) Vgs(th) (Max) @ Id: 1.3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Current - Continuous Drain (Id) @ 25°C: 27A Drain to Source Voltage (Vdss): 30V Power - Max: 2.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
auf Bestellung 35664 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87312Q3E | Texas Instruments |
Description: MOSFET 2N-CH 30V 27A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 1349 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87312Q3E | Texas Instruments |
MOSFETs Dual 30V N-CH NexFET Pwr MOSFETs |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD87312Q3E |
TI QFN 12+ |
auf Bestellung 1950 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD87312Q3E |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 27A 8VSON
Part Status: Active
Supplier Device Package: 8-VSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: MOSFET 2N-CH 30V 27A 8VSON
Part Status: Active
Supplier Device Package: 8-VSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 35664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 484+ | 0.98 EUR |
| CSD87312Q3E |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 27A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
Description: MOSFET 2N-CH 30V 27A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1 EUR |
| CSD87312Q3E |
|
Hersteller: Texas Instruments
MOSFETs Dual 30V N-CH NexFET Pwr MOSFETs
MOSFETs Dual 30V N-CH NexFET Pwr MOSFETs
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.33 EUR |
| CSD87312Q3E |
|
TI QFN 12+
auf Bestellung 1950 Stücke:
Lieferzeit 21-28 Tag (e)