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Technische Details CSD87313DMST Texas Instruments
Description: MOSFET 2N-CH 30V 8WSON, Part Status: Active, Supplier Device Package: 8-WSON (3.3x3.3), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD87313DMST nach Preis ab 1.77 EUR bis 6.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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CSD87313DMST | Texas Instruments |
 Description: MOSFET 2N-CH 30V 8WSONPart Status: Active Supplier Device Package: 8-WSON (3.3x3.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Drain to Source Voltage (Vdss): 30V Power - Max: 2.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87313DMST | Texas Instruments |
MOSFETs 30-V N channel NexF ET power MOSFET du A 595-CSD87313DMS |
auf Bestellung 922 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87313DMST | Texas Instruments |
Description: MOSFET 2N-CH 30V 8WSON Part Status: Active Supplier Device Package: 8-WSON (3.3x3.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Drain to Source Voltage (Vdss): 30V Power - Max: 2.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD87313DMST |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 8WSON
Part Status: Active
Supplier Device Package: 8-WSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8WSON
Part Status: Active
Supplier Device Package: 8-WSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.39 EUR |
| 500+ | 2.19 EUR |
| 750+ | 2.09 EUR |
| 1250+ | 1.98 EUR |
| CSD87313DMST |
|
Hersteller: Texas Instruments
MOSFETs 30-V N channel NexF ET power MOSFET du A 595-CSD87313DMS
MOSFETs 30-V N channel NexF ET power MOSFET du A 595-CSD87313DMS
auf Bestellung 922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.24 EUR |
| 10+ | 3.58 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.77 EUR |
| CSD87313DMST |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 8WSON
Part Status: Active
Supplier Device Package: 8-WSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 8WSON
Part Status: Active
Supplier Device Package: 8-WSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.01 EUR |
| 10+ | 3.92 EUR |
| 100+ | 2.7 EUR |