 
CSD87335Q3DT Texas Instruments
 Hersteller: Texas Instruments
                                                Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 30V 25A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-LSON (3.3x3.3)
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 250+ | 1.78 EUR | 
| 500+ | 1.72 EUR | 
| 750+ | 1.68 EUR | 
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Technische Details CSD87335Q3DT Texas Instruments
Description: MOSFET 2N-CH 30V 25A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-LSON (3.3x3.3), Part Status: Active. 
Weitere Produktangebote CSD87335Q3DT nach Preis ab 1.39 EUR bis 3.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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|   | CSD87335Q3DT | Hersteller : Texas Instruments |  MOSFETs 30-V N channel sync hronous buck NexFET  A 595-CSD87335Q3D | auf Bestellung 8140 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CSD87335Q3DT | Hersteller : Texas Instruments |  Description: MOSFET 2N-CH 30V 25A 8LSON Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-LSON (3.3x3.3) Part Status: Active | auf Bestellung 1142 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CSD87335Q3DT | Hersteller : Texas Instruments |  Power Block 8-Pin LSON-CLIP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
|   | CSD87335Q3DT | Hersteller : Texas Instruments |  Power Block 8-Pin LSON-CLIP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
|   | CSD87335Q3DT | Hersteller : Texas Instruments |  Power Block 8-Pin LSON-CLIP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
|   | CSD87335Q3DT | Hersteller : Texas Instruments |  High Frequency Synchronous Power Module | Produkt ist nicht verfügbar | |||||||||||||||
|   | CSD87335Q3DT | Hersteller : TEXAS INSTRUMENTS |  Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 25A; 1.5W; LSON-CLIP8 Type of transistor: N-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 1.5W Case: LSON-CLIP8 Gate-source voltage: ±10V Mounting: SMD Gate charge: 5.7/10.7nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Half-Bridge Power MOSFET Dimensions: 3.3x3.3mm | Produkt ist nicht verfügbar |