CSD87335Q3DT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 30V 25A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-LSON (3.3x3.3)
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.78 EUR |
| 500+ | 1.72 EUR |
| 750+ | 1.68 EUR |
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Technische Details CSD87335Q3DT Texas Instruments
Description: MOSFET 2N-CH 30V 25A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-LSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87335Q3DT nach Preis ab 1.49 EUR bis 3.17 EUR
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Description: MOSFET 2N-CH 30V 25A 8LSON Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-LSON (3.3x3.3) Part Status: Active |
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