| Anzahl | Preis |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.36 EUR |
| 100+ | 1.13 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.05 EUR |
| 2500+ | 1.01 EUR |
| 5000+ | 0.96 EUR |
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Technische Details CSD87503Q3E Texas Instruments
Description: MOSFET 2N-CH 30V 10A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V, Rds On (Max) @ Id, Vgs: 13.5mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87503Q3E nach Preis ab 1.05 EUR bis 2.08 EUR
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CSD87503Q3E | Texas Instruments |
 Description: MOSFET 2N-CH 30V 10A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 15.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 2205 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD87503Q3E |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 10A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
Description: MOSFET 2N-CH 30V 10A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 12+ | 1.51 EUR |
| 25+ | 1.37 EUR |
| 100+ | 1.21 EUR |
| 250+ | 1.13 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.05 EUR |