CSD88537ND


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd
Produktcode: 118288
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Transistoren > MOSFET N-CH

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Weitere Produktangebote CSD88537ND nach Preis ab 0.72 EUR bis 3.57 EUR

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CSD88537ND CSD88537ND Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd Description: MOSFET 2N-CH 60V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.03 EUR
5000+0.97 EUR
7500+0.93 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88537ND CSD88537ND Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd MOSFETs 60-V Dual N-Channel Power MOSFET A 595-CSD88537NDT
auf Bestellung 12981 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.53 EUR
10+1.69 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.84 EUR
2500+0.76 EUR
5000+0.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88537ND CSD88537ND Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd Description: MOSFET 2N-CH 60V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10345 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.3 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88537ND suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.03 EUR
5000+0.97 EUR
7500+0.93 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88537ND suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd
Hersteller: Texas Instruments
MOSFETs 60-V Dual N-Channel Power MOSFET A 595-CSD88537NDT
auf Bestellung 12981 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.53 EUR
10+1.69 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.84 EUR
2500+0.76 EUR
5000+0.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88537ND suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88537nd
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10345 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.57 EUR
10+2.3 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH