CSD88537NDT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 250+ | 0.97 EUR |
| 500+ | 0.92 EUR |
| 750+ | 0.9 EUR |
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Technische Details CSD88537NDT Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 15A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount.
Weitere Produktangebote CSD88537NDT nach Preis ab 0.95 EUR bis 3.1 EUR
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CSD88537NDT | Texas Instruments |
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD88537ND |
auf Bestellung 934 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD88537NDT | Texas Instruments |
Description: MOSFET 2N-CH 60V 15A 8SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Current - Continuous Drain (Id) @ 25°C: 15A Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 60V Power - Max: 2.1W |
auf Bestellung 1552 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD88537NDT |
|
Hersteller: Texas Instruments
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD88537ND
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD88537ND
auf Bestellung 934 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.06 EUR |
| 10+ | 2.15 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.95 EUR |
| CSD88537NDT |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Description: MOSFET 2N-CH 60V 15A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
auf Bestellung 1552 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.1 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.1 EUR |