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CSD88539NDT

CSD88539NDT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+0.85 EUR
500+0.77 EUR
750+0.73 EUR
1250+0.68 EUR
1750+0.65 EUR
2500+0.63 EUR
6250+0.57 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD88539NDT Texas Instruments

Description: MOSFET 2N-CH 60V 15A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 15A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote CSD88539NDT nach Preis ab 0.58 EUR bis 2.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD88539NDT CSD88539NDT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8
Type of transistor: N-MOSFET x2
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
69+1.04 EUR
89+0.81 EUR
124+0.58 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88539NDT CSD88539NDT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd Description: MOSFET 2N-CH 60V 15A 8SOIC
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
auf Bestellung 6766 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
13+1.47 EUR
100+0.98 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88539NDT CSD88539NDT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.76 EUR
10+1.76 EUR
100+1.02 EUR
500+0.87 EUR
1000+0.78 EUR
2500+0.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88539NDT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd
CSD88539NDT
Hersteller: TEXAS INSTRUMENTS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8
Type of transistor: N-MOSFET x2
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
46+1.56 EUR
69+1.04 EUR
89+0.81 EUR
124+0.58 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88539NDT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd
CSD88539NDT
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
auf Bestellung 6766 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.32 EUR
13+1.47 EUR
100+0.98 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD88539NDT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd88539nd
CSD88539NDT
Hersteller: Texas Instruments
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.76 EUR
10+1.76 EUR
100+1.02 EUR
500+0.87 EUR
1000+0.78 EUR
2500+0.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH