CSD88539NDT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.23 EUR |
| 500+ | 1.12 EUR |
| 750+ | 1.06 EUR |
| 1250+ | 0.99 EUR |
| 1750+ | 0.95 EUR |
| 2500+ | 0.92 EUR |
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Technische Details CSD88539NDT Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 15A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD88539NDT nach Preis ab 0.71 EUR bis 3.36 EUR
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CSD88539NDT | TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8 Type of transistor: N-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Power dissipation: 2.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 352 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD88539NDT | Texas Instruments |
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND |
auf Bestellung 1310 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD88539NDT | Texas Instruments |
Description: MOSFET 2N-CH 60V 15A 8SOIC Drain to Source Voltage (Vdss): 60V Power - Max: 2.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V Current - Continuous Drain (Id) @ 25°C: 15A |
auf Bestellung 5853 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD88539NDT |
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Hersteller: TEXAS INSTRUMENTS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8
Type of transistor: N-MOSFET x2
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8
Type of transistor: N-MOSFET x2
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 1.9 EUR |
| 67+ | 1.27 EUR |
| 86+ | 0.99 EUR |
| 120+ | 0.71 EUR |
| CSD88539NDT |
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Hersteller: Texas Instruments
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.28 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.93 EUR |
| 2500+ | 0.9 EUR |
| CSD88539NDT |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Description: MOSFET 2N-CH 60V 15A 8SOIC
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A
auf Bestellung 5853 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.42 EUR |