
CSICD05-1200 TR13 Central Semiconductor

Schottky Diodes & Rectifiers 5.0A Schottky 1200V 1200Vrsm 40A 150W
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Technische Details CSICD05-1200 TR13 Central Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 240pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 190 µA @ 1200 V.
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CSICD05-1200 TR13 | Hersteller : Central Semiconductor Corp |
Description: DIODE SIL CARBIDE 1.2KV 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 190 µA @ 1200 V |
Produkt ist nicht verfügbar |
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CSICD05-1200 TR13 | Hersteller : Central Semiconductor Corp |
Description: DIODE SIL CARBIDE 1.2KV 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 190 µA @ 1200 V |
Produkt ist nicht verfügbar |