CUHS10F60,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 60V 1A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
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Technische Details CUHS10F60,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A US2H, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, Flat Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 130pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: US2H, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 60 V, Current - Reverse Leakage @ Vr: 40 µA @ 60 V.
Weitere Produktangebote CUHS10F60,H3F nach Preis ab 0.22 EUR bis 1.14 EUR
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CUHS10F60,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 1A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Current - Reverse Leakage @ Vr: 40 µA @ 60 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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CUHS10F60,H3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF |
auf Bestellung 23680 Stücke: Lieferzeit 14-28 Tag (e) |
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