CUHS10F60,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A US2H
Supplier Device Package: US2H
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
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Technische Details CUHS10F60,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A US2H, Supplier Device Package: US2H, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 130pF @ 0V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, Flat Leads, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 40 µA @ 60 V, Voltage - DC Reverse (Vr) (Max): 60 V, Operating Temperature - Junction: 150°C (Max).
Weitere Produktangebote CUHS10F60,H3F nach Preis ab 0.086 EUR bis 0.37 EUR
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CUHS10F60,H3F | Toshiba |
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF |
auf Bestellung 8540 Stücke: Lieferzeit 10-14 Tag (e) |
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CUHS10F60,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 1A US2H Current - Reverse Leakage @ Vr: 40 µA @ 60 V Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: US2H Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 130pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 5456 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS10F60,H3F |
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Hersteller: Toshiba
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF
auf Bestellung 8540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.37 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.095 EUR |
| 9000+ | 0.088 EUR |
| 24000+ | 0.086 EUR |
| CUHS10F60,H3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A US2H
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 1A US2H
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 54+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |