CUS05(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A US-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A US-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Technische Details CUS05(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A US-FLAT, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: US-FLAT (1.25x2.5), Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 370 mV @ 700 mA, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote CUS05(TE85L,Q,M)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| CUS05(TE85L,Q,M) | Hersteller : Toshiba |
 Schottky Diodes & Rectifiers 20V Vrrm 1.0A IF 20A 0.37V VFM |
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