CUS06(TE85L,Q,M) Toshiba
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Lieferzeit 10-14 Tag (e)
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Technische Details CUS06(TE85L,Q,M) Toshiba
Description: DIODE SCHOTTKY 20V 1A US-FLAT, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: US-FLAT (1.25x2.5), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA, Current - Reverse Leakage @ Vr: 30 µA @ 20 V.
Weitere Produktangebote CUS06(TE85L,Q,M)
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CUS06(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 1A US-FLAT Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA Current - Reverse Leakage @ Vr: 30 µA @ 20 V |
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