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CUS10F30,H3F

CUS10F30,H3F Toshiba Semiconductor and Storage

docget.jsp?did=8862&prodName=CUS10F30
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.095 EUR
9000+0.089 EUR
15000+0.083 EUR
21000+0.08 EUR
30000+0.076 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details CUS10F30,H3F Toshiba Semiconductor and Storage

Description: DIODE SCHOTTKY 30V 1A USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 170pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 30 V.

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CUS10F30,H3F CUS10F30,H3F Toshiba 467FCC2030E571FAC993DD1E48A9EB18D67A18ED38242E010CF855366C2B2F46.pdf Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 20A .045V VFM
auf Bestellung 98587 Stücke:
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11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.096 EUR
6000+0.088 EUR
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CUS10F30,H3F CUS10F30,H3F Toshiba Semiconductor and Storage docget.jsp?did=8862&prodName=CUS10F30 Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 58766 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CUS10F30,H3F 467FCC2030E571FAC993DD1E48A9EB18D67A18ED38242E010CF855366C2B2F46.pdf
CUS10F30,H3F
Hersteller: Toshiba
Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 20A .045V VFM
auf Bestellung 98587 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.096 EUR
6000+0.088 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CUS10F30,H3F docget.jsp?did=8862&prodName=CUS10F30
CUS10F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 58766 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH