CXDM1002N TR PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 100V 2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.93 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
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Produktbewertung abgeben
Technische Details CXDM1002N TR PBFREE Central Semiconductor Corp
Description: MOSFET N-CH 100V 2A SOT-89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-89, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote CXDM1002N TR PBFREE nach Preis ab 0.76 EUR bis 2.09 EUR
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CXDM1002N TR PBFREE | Central Semiconductor |
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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CXDM1002N TR PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 100V 2A SOT-89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 2586 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CXDM1002N TR PBFREE |
|
Hersteller: Central Semiconductor
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.93 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.86 EUR |
| 2000+ | 0.81 EUR |
| 5000+ | 0.76 EUR |
| CXDM1002N TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 100V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 100V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 2586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 13+ | 1.73 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |