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CXDM3069N TR PBFREE

CXDM3069N TR PBFREE Central Semiconductor Corp

CXDM3069N.PDF Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 6.9A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-89
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.87 EUR
100+0.6 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CXDM3069N TR PBFREE Central Semiconductor Corp

Description: MOSFET N-CH 30V 6.9A SOT-89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-89, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V.

Weitere Produktangebote CXDM3069N TR PBFREE nach Preis ab 0.57 EUR bis 1.06 EUR

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Preis
CXDM3069N TR PBFREE CXDM3069N TR PBFREE Hersteller : Central Semiconductor CXDM3069N.PDF MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.06 EUR
10+0.94 EUR
100+0.72 EUR
500+0.57 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CXDM3069N TR PBFREE CXDM3069N TR PBFREE Hersteller : Central Semiconductor Corp CXDM3069N.PDF Description: MOSFET N-CH 30V 6.9A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-89
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH