CXDM4060N TR PBFREE Central Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.38 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.56 EUR |
| 5000+ | 0.51 EUR |
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Technische Details CXDM4060N TR PBFREE Central Semiconductor
Description: MOSFET N-CH 40V 6A SOT-89, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): 20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-89, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote CXDM4060N TR PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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CXDM4060N TR PBFREE | Central Semiconductor Corp |
 Description: MOSFET N-CH 40V 6A SOT-89Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): 20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CXDM4060N TR PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 40V 6A SOT-89 Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): 20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CXDM4060N TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 40V 6A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 6A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CXDM4060N TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 40V 6A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 6A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH