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CXDM4060N TR PBFREE

CXDM4060N TR PBFREE Central Semiconductor Corp


CXDM4060N.PDF Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 40V 6A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.72 EUR
Mindestbestellmenge: 1000
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Technische Details CXDM4060N TR PBFREE Central Semiconductor Corp

Description: MOSFET N-CH 40V 6A SOT-89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-89, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V.

Weitere Produktangebote CXDM4060N TR PBFREE nach Preis ab 0.85 EUR bis 2.2 EUR

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CXDM4060N TR PBFREE CXDM4060N TR PBFREE Hersteller : Central Semiconductor Corp CXDM4060N.PDF Description: MOSFET N-CH 40V 6A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 20 V
auf Bestellung 3626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.58 EUR
13+ 1.42 EUR
100+ 1.11 EUR
500+ 0.91 EUR
Mindestbestellmenge: 12
CXDM4060N TR PBFREE CXDM4060N TR PBFREE Hersteller : Central Semiconductor CXDM4060N.PDF MOSFET 40Vds N-Ch Enh FET 20Vgs 6.0A 1.2W
auf Bestellung 6810 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.2 EUR
27+ 1.97 EUR
100+ 1.53 EUR
500+ 1.27 EUR
1000+ 1 EUR
2000+ 0.93 EUR
10000+ 0.85 EUR
Mindestbestellmenge: 24
CXDM4060N TR PBFREE Hersteller : Central Semiconductor cxdm4060n.pdf Surface Mount N-Channel Enhancement-Mode Silicon MOSFET
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