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CXDM6053N TR PBFREE

CXDM6053N TR PBFREE Central Semiconductor Corp

CXDM6053N.PDF Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 60V 5.3A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.67 EUR
2000+ 0.63 EUR
Mindestbestellmenge: 1000
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Technische Details CXDM6053N TR PBFREE Central Semiconductor Corp

Description: MOSFET N-CH 60V 5.3A SOT-89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-89, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 30 V.

Weitere Produktangebote CXDM6053N TR PBFREE nach Preis ab 0.6 EUR bis 1.52 EUR

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CXDM6053N TR PBFREE CXDM6053N TR PBFREE Hersteller : Central Semiconductor Corp CXDM6053N.PDF Description: MOSFET N-CH 60V 5.3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 30 V
auf Bestellung 5540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
15+ 1.24 EUR
100+ 0.97 EUR
500+ 0.82 EUR
Mindestbestellmenge: 12
CXDM6053N TR PBFREE CXDM6053N TR PBFREE Hersteller : Central Semiconductor CXDM6053N.PDF MOSFET 60Vds N-Ch Enh FET 20Vgs 5.3A 1.2W
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.52 EUR
10+ 1.25 EUR
100+ 0.97 EUR
500+ 0.83 EUR
1000+ 0.67 EUR
2000+ 0.63 EUR
5000+ 0.6 EUR
Mindestbestellmenge: 2