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CY14V104NA-BA25XI

CY14V104NA-BA25XI Infineon Technologies


download Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+40.83 EUR
Mindestbestellmenge: 21
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Technische Details CY14V104NA-BA25XI Infineon Technologies

Description: IC NVSRAM 4MBIT PARALLEL 48FBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 48-FBGA (6x10), Part Status: Active, Write Cycle Time - Word, Page: 25ns, Memory Interface: Parallel, Access Time: 25 ns, Memory Organization: 256K x 16.

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CY14V104NA-BA25XI Hersteller : Cypress Semiconductor CY14V104LA_CY14V104NA_001-53954_0H_V-478396.pdf NVRAM 1Mb 25ns 256K x 16 nvSRAM
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
CY14V104NA-BA25XI CY14V104NA-BA25XI Hersteller : Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
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