Technische Details CY62146G-45ZSXI Cypress Semiconductor
Description: IC SRAM 4MBIT PARALLEL 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote CY62146G-45ZSXI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| CY62146G-45ZSXI | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - CY62146G-45ZSXI - CY62146 STANDARD SRAM, 256KX16, 45NS, CtariffCode: 85423245 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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CY62146G-45ZSXI | Hersteller : Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
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