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CY62147GE30-45BVXIT Infineon Technologies

words_x_16_bit_static_ram_with_error_correcting_code_ecc.pdf Hersteller: Infineon Technologies
4-Mbit 256K words x 16 bit Static RAM with Error-Correcting Code
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Technische Details CY62147GE30-45BVXIT Infineon Technologies

Description: IC SRAM 4MBIT PARALLEL 48VFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-VFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.2V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-VFBGA (6x8), Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.

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CY62147GE30-45BVXIT CY62147GE30-45BVXIT Hersteller : Infineon Technologies Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62147GE30-45BVXIT CY62147GE30-45BVXIT Hersteller : Cypress Semiconductor 001-92847_CY62147G_CY621472G_CY62147GE_MOBL_4_MBIT-1082279.pdf SRAM Micropower SRAMs
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