D251K18BXPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 255A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - DC Reverse (Vr) (Max): 1800 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 180°C
Current - Average Rectified (Io): 255A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Packaging: Bulk
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Technische Details D251K18BXPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.8KV 255A, Current - Reverse Leakage @ Vr: 30 mA @ 1800 V, Voltage - DC Reverse (Vr) (Max): 1800 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 180°C, Current - Average Rectified (Io): 255A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Stud Mount, Package / Case: DO-205AA, DO-8, Stud, Packaging: Bulk.