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D650N08TXPSA1

D650N08TXPSA1 Infineon Technologies

D650N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 800V 650A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 180°C
Current - Average Rectified (Io): 650A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Bulk
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Technische Details D650N08TXPSA1 Infineon Technologies

Description: DIODE GEN PURP 800V 650A, Current - Reverse Leakage @ Vr: 20 mA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -40°C ~ 180°C, Current - Average Rectified (Io): 650A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Clamp On, Package / Case: DO-200AA, A-PUK, Packaging: Bulk.