D711N60TXPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 6KV 1070A
Voltage - DC Reverse (Vr) (Max): 6000 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 1070A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Current - Reverse Leakage @ Vr: 50 mA @ 6000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
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Technische Details D711N60TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 6KV 1070A, Voltage - DC Reverse (Vr) (Max): 6000 V, Operating Temperature - Junction: -40°C ~ 160°C, Current - Average Rectified (Io): 1070A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Clamp On, Package / Case: DO-200AB, B-PUK, Packaging: Tray, Current - Reverse Leakage @ Vr: 50 mA @ 6000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A.