D850N30TXPSA1 Infineon Technologies

Description: DIODE GEN PURP 3KV 850A, Packaging: Bulk, Package / Case: DO-200AB, B-PUK, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 850A, Operating Temperature - Junction: -40°C ~ 160°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 3000 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A, Current - Reverse Leakage @ Vr: 50 mA @ 3000 V.