D850N36TXPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 850A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 850A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
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Technische Details D850N36TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 3.6KV 850A, Current - Reverse Leakage @ Vr: 50 mA @ 3600 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A, Voltage - DC Reverse (Vr) (Max): 3600 V, Operating Temperature - Junction: -40°C ~ 160°C, Current - Average Rectified (Io): 850A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Clamp On, Package / Case: DO-200AB, B-PUK, Packaging: Bulk.