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DAA10EM1800PZ-TUB

DAA10EM1800PZ-TUB IXYS


DAA10EM1800PZ.pdf Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
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Technische Details DAA10EM1800PZ-TUB IXYS

Description: DIODE AVAL 1.8KV 10A TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Avalanche, Capacitance @ Vr, F: 4pF @ 400V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263HV, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1800 V.

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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB Hersteller : IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDAA10EM1800PZ.pdf Description: DIODE AVAL 1.8KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB Hersteller : IXYS media-3321864.pdf Rectifiers TO263D2
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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB Hersteller : IXYS DAA10EM1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar