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DACMH80N1200

DACMH80N1200 DACO Semiconductor


pVersion=0046&contRep=ZT&docId=005056AB752F1ED88395ACFD36CB0A18&compId=DACMH80N1200.pdf?ci_sign=a16e679a8bfb2e39966818c4c9e827fad1e55231 Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: HB9434
Electrical mounting: screw
Mechanical mounting: screw
Drain current: 50A
On-state resistance: 34mΩ
Power dissipation: 460W
Polarisation: unipolar
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 250A
Technology: SiC
Operating temperature: -55...150°C
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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Technische Details DACMH80N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Case: HB9434, Electrical mounting: screw, Mechanical mounting: screw, Drain current: 50A, On-state resistance: 34mΩ, Power dissipation: 460W, Polarisation: unipolar, Gate-source voltage: -10...20V, Topology: MOSFET half-bridge, Pulsed drain current: 250A, Technology: SiC, Operating temperature: -55...150°C, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote DACMH80N1200

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DACMH80N1200 DACMH80N1200 Hersteller : DACO Semiconductor pVersion=0046&contRep=ZT&docId=005056AB752F1ED88395ACFD36CB0A18&compId=DACMH80N1200.pdf?ci_sign=a16e679a8bfb2e39966818c4c9e827fad1e55231 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: HB9434
Electrical mounting: screw
Mechanical mounting: screw
Drain current: 50A
On-state resistance: 34mΩ
Power dissipation: 460W
Polarisation: unipolar
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 250A
Technology: SiC
Operating temperature: -55...150°C
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH