DACMH80N1200 DACO Semiconductor
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Operating temperature: -55...150°C
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Power dissipation: 460W
On-state resistance: 34mΩ
Drain current: 50A
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 250A
Case: HB9434
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Operating temperature: -55...150°C
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Power dissipation: 460W
On-state resistance: 34mΩ
Drain current: 50A
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 250A
Case: HB9434
Anzahl je Verpackung: 1 Stücke
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Technische Details DACMH80N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A, Type of module: MOSFET transistor, Operating temperature: -55...150°C, Mechanical mounting: screw, Electrical mounting: screw, Polarisation: unipolar, Power dissipation: 460W, On-state resistance: 34mΩ, Drain current: 50A, Drain-source voltage: 1.2kV, Semiconductor structure: transistor/transistor, Technology: SiC, Gate-source voltage: -10...20V, Topology: MOSFET half-bridge, Pulsed drain current: 250A, Case: HB9434, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMH80N1200
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DACMH80N1200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A Type of module: MOSFET transistor Operating temperature: -55...150°C Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Power dissipation: 460W On-state resistance: 34mΩ Drain current: 50A Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Technology: SiC Gate-source voltage: -10...20V Topology: MOSFET half-bridge Pulsed drain current: 250A Case: HB9434 |
Produkt ist nicht verfügbar |