
DACMI120N1200 DACO Semiconductor

Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: SOT227B
On-state resistance: 25mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Operating temperature: -55...150°C
Gate-source voltage: -10...20V
Anzahl je Verpackung: 1 Stücke
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Technische Details DACMI120N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 76A, Pulsed drain current: 300A, Power dissipation: 500W, Case: SOT227B, On-state resistance: 25mΩ, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Operating temperature: -55...150°C, Gate-source voltage: -10...20V, Anzahl je Verpackung: 1 Stücke.
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DACMI120N1200 | Hersteller : DACO Semiconductor |
![]() Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 76A Pulsed drain current: 300A Power dissipation: 500W Case: SOT227B On-state resistance: 25mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Operating temperature: -55...150°C Gate-source voltage: -10...20V |
Produkt ist nicht verfügbar |