DACMI160N1200 DACO Semiconductor
Hersteller: DACO SemiconductorCategory: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Power dissipation: 580W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -5...20V
Pulsed drain current: 400A
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 20mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 185.36 EUR |
| 3+ | 182.37 EUR |
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Technische Details DACMI160N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A, Type of module: MOSFET transistor, Power dissipation: 580W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, Technology: SiC, Gate-source voltage: -5...20V, Pulsed drain current: 400A, Operating temperature: -55...150°C, Case: SOT227B, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 110A, On-state resistance: 20mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMI160N1200 nach Preis ab 182.37 EUR bis 185.36 EUR
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DACMI160N1200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Power dissipation: 580W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -5...20V Pulsed drain current: 400A Operating temperature: -55...150°C Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 110A On-state resistance: 20mΩ |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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