Produkte > DACO SEMICONDUCTOR > DAGNH2001200

DAGNH2001200 DACO Semiconductor

Hersteller: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Power dissipation: 1.3kW
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Case: HW9434
Electrical mounting: screw

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Technische Details DAGNH2001200 DACO Semiconductor

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Power dissipation: 1.3kW, Type of semiconductor module: IGBT, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Max. off-state voltage: 1.2kV, Case: HW9434, Electrical mounting: screw.