DAGNH200600 DACO Semiconductor
Hersteller: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 780W
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 780W
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details DAGNH200600 DACO Semiconductor
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Case: HW9434, Power dissipation: 780W, Type of module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Topology: IGBT half-bridge, Technology: NPT, Mechanical mounting: screw, Pulsed collector current: 400A, Max. off-state voltage: 0.6kV, Electrical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DAGNH200600
Foto | Bezeichnung | Hersteller | Beschreibung |
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DAGNH200600 | Hersteller : DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: HW9434 Power dissipation: 780W Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT half-bridge Technology: NPT Mechanical mounting: screw Pulsed collector current: 400A Max. off-state voltage: 0.6kV Electrical mounting: screw |
Produkt ist nicht verfügbar |