DAGNH200600 DACO Semiconductor

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Power dissipation: 780W, Type of semiconductor module: IGBT, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Max. off-state voltage: 0.6kV, Technology: NPT, Case: HW9434, Electrical mounting: screw.