DAGNH751200 DACO Semiconductor
Hersteller: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: HW9434
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 350W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: HW9434
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 350W
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DAGNH751200 DACO Semiconductor
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 75A, Case: HW9434, Electrical mounting: screw, Mechanical mounting: screw, Power dissipation: 350W, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DAGNH751200
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
DAGNH751200 | Hersteller : DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: HW9434 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 350W Gate-emitter voltage: ±20V Pulsed collector current: 150A |
Produkt ist nicht verfügbar |