DAMI220N200 DACO Semiconductor
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 180A; SOT227B; screw; Idm: 760A
Electrical mounting: screw
Mechanical mounting: screw
Operating temperature: -55...150°C
Polarisation: unipolar
Case: SOT227B
Power dissipation: 560W
Type of module: MOSFET transistor
Gate-source voltage: -20...20V
Pulsed drain current: 760A
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.8mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 180A; SOT227B; screw; Idm: 760A
Electrical mounting: screw
Mechanical mounting: screw
Operating temperature: -55...150°C
Polarisation: unipolar
Case: SOT227B
Power dissipation: 560W
Type of module: MOSFET transistor
Gate-source voltage: -20...20V
Pulsed drain current: 760A
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.8mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 38.77 EUR |
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Technische Details DAMI220N200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; single transistor; 200V; 180A; SOT227B; screw; Idm: 760A, Electrical mounting: screw, Mechanical mounting: screw, Operating temperature: -55...150°C, Polarisation: unipolar, Case: SOT227B, Power dissipation: 560W, Type of module: MOSFET transistor, Gate-source voltage: -20...20V, Pulsed drain current: 760A, Semiconductor structure: single transistor, Drain-source voltage: 200V, Drain current: 180A, On-state resistance: 7.8mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DAMI220N200 nach Preis ab 38.77 EUR bis 38.77 EUR
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DAMI220N200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 180A; SOT227B; screw; Idm: 760A Electrical mounting: screw Mechanical mounting: screw Operating temperature: -55...150°C Polarisation: unipolar Case: SOT227B Power dissipation: 560W Type of module: MOSFET transistor Gate-source voltage: -20...20V Pulsed drain current: 760A Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 180A On-state resistance: 7.8mΩ |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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