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DCP56-16-13

DCP56-16-13 Diodes Inc


ds30796.pdf Hersteller: Diodes Inc
Trans GP BJT NPN 80V 1A 1000mW 4-Pin(3+Tab) SOT-223 T/R
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Technische Details DCP56-16-13 Diodes Inc

Description: TRANS NPN 80V 1A SOT223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 200MHz, Supplier Device Package: SOT-223-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W.

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DCP56-16-13 DCP56-16-13 Hersteller : Diodes Incorporated DCP56_-16.pdf Description: TRANS NPN 80V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP56-16-13 DCP56-16-13 Hersteller : Diodes Incorporated diodes inc._ds30796-1164024.pdf Bipolar Transistors - BJT 1W 80V
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DCP56-16-13 Hersteller : onsemi DCP56_-16.pdf Bipolar Transistors - BJT
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