Technische Details DD1000S33HE3B60BOSA1 Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 1000A (DC), Supplier Device Package: AG-IHVB130-3, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A, Current - Reverse Leakage @ Vr: 1000 A @ 1800 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DD1000S33HE3B60BOSA1 | Hersteller : Infineon Technologies |
Description: DIODE MOD GP 3300V AGIHVB130-3 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1000A (DC) Supplier Device Package: AG-IHVB130-3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A Current - Reverse Leakage @ Vr: 1000 A @ 1800 V |
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| DD1000S33HE3B60BOSA1 | Hersteller : Infineon Technologies |
 IGBT Modules IHV IHM T XHP 3 3-6 5K |
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